| PART |
Description |
Maker |
| IXGP16N60B2 IXGA16N60B2 |
HiPerFAST IGBTs B2-Class High Speed
|
IXYS Corporation
http://
|
| IXGT50N60C2 IXGH50N60C2 |
HiPerFAST IGBT C2-Class High Speed IGBTs
|
IXYS Corporation
|
| IXGH60N60C2 IXGT60N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBTs
|
IXYS[IXYS Corporation]
|
| IXGT50N60B2 |
HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
| 2SH31 |
Silicon N Channel IGBT High Speed Power Switching
IGBTs
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SH30 |
Silicon N Channel IGBT High Speed Power Switching
IGBTs
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 99161 60N60B2 60N60B2D1 IXGR60N60B2 IXGR60N60B2D1 |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| TC4422VSM.SM713 TC4421 TC4421_04 TC4421CAT TC4421C |
The TC4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form ...
9A High-Speed MOSFET Drivers
|
MICROCHIP[Microchip Technology]
|
| IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
| APT8030JN APT8035JN |
POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS V 800V 27.0A 0.30/0.35 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
